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| NJD35N04G NPN Darlington Power Transistor This high voltage power Darlington has been specifically designed for inductive applications such as Electronic Ignition, Switching Regulators and Motor Control. Features http://onsemi.com * Exceptional Safe Operating Area * High VCE; High Current Gain * These are Pb-Free Devices Benefits * Reliable Performance at Higher Powers * Designed for Inductive Loads * Very Low Current Requirements Applications DARLINGTON POWER TRANSISTORS 4 AMPERES 350 VOLTS 45 WATTS MARKING DIAGRAM 4 12 3 Y = Year WW = Work Week NJD35N04 = Device Code G = Pb-Free Device * * * * * Internal Combustion Engine Ignition Control Switching Regulators Motor Controls Light Ballast Photo Flash DPAK CASE 369C STYLE 1 YWW NJD 35N04G MAXIMUM RATINGS Rating Collector-Emitter Sustaining Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Continuous Peak Symbol VCEO VCBO VCES VEBO IC ICM IB PD TJ, Tstg Value 350 700 700 5.0 4.0 8.0 0.5 45 0.36 -65 to +150 Unit Vdc Vdc Vdc Vdc Adc Adc W W/C C ORDERING INFORMATION Device NJD35N04G NJD35N04T4G Package DPAK (Pb-Free) DPAK (Pb-Free) Shipping 75 Units / Rail 2500/Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. THERMAL CHARACTERISTICS Characteristic Thermal Resistance Junction-to-Case Junction-to-Ambient Symbol RqJC RqJA Value 2.78 71.4 Unit C/W (c) Semiconductor Components Industries, LLC, 2006 1 April, 2006 - Rev. 1 Publication Order Number: NJD35N04/D NJD35N04G ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (IC = 10 mA, L = 10 mH) Collector Cutoff Current (VCE = 500 V) (IB = 0) (VCE = 500 V, TC = 125C) Collector Cutoff Current (VCE = 350 V) (IB = 0) (VCE = 300 V, TC = 125C) Emitter Cutoff Current (VBE = 5.0 Vdc) ON CHARACTERISTICS Collector-Emitter Saturation Voltage (IC = 2.0 A, IB = 20 mA) (IC = 2.0 A, IB = 20 mA 125C) Base-Emitter Saturation Voltage (IC = 2.0 A, IB = 20 mA) (IC = 2.0 A, IB = 20 mA 125C) Base-Emitter On Voltage (IC = 2.0 A, VCE = 2.0 V) (IC = 2.0 A, VCE = 2.0 V 125C) DC Current Gain (IC = 2.0 A, VCE = 2.0 V) (IC = 4.0 A, VCE = 2.0 Vdc) DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 2.0 A, VCE = 10 V, f = 1.0 MHz) Output Capacitance (VCB = 10 V, IE = 0, f = 0.1 MHz) SWITCHING CHARACTERISTICS VCC = 12 V, Vclamp = 250 V, L = 4 mH IC = 2 A, IB1 = 20 mA, IB2 = -20 mA ts tf - - 18 0.8 - - mSec fT 90 - - MHz VCE(sat) - - VCEO(sus) 350 - - Vdc Symbol Min Typ Max Unit ICES - - - - - - - - - - 50 250 50 250 5.0 mAdc ICEO mAdc IEBO mAdc 1.5 Vdc VBE(sat) - - 2.0 Vdc VBE(on) - - 2.0 Vdc hFE 2000 300 - - - - - Cob - 60 - pF C B E 2 KW Figure 1. Darlington Circuit Schematic http://onsemi.com 2 NJD35N04G TYPICAL CHARACTERISTICS 50 PD, POWER DISSIPATION (W) 45 40 35 30 25 20 15 10 5.0 0 10 30 50 70 90 110 130 150 170 T, TEMPERATURE (C) 10 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 TC hFE, DC CURRENT GAIN 125C 1000 25C 10,000 100 VCE = 2 V Figure 2. Power Derating 4.0 VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 25C 125C Ic/Ib = 100 2.4 2.0 1.6 Figure 3. DC Current Gain VBE(sat), BASE-EMITTER SATURATION VOLTAGE (V) 25C 1.2 0.8 0.4 0 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 125C Ic/Ib = 100 Figure 4. Collector-Emitter Saturation Voltage Figure 5. Base-Emitter Saturation Voltage VBE(on), BASE-EMITTER VOLTAGE (V) 2.0 IC, COLLECTOR CURRENT (A) 10 10 mS 100 mS 1 mS 300 mS 1.6 DC 1.0 25C 1.2 0.1 0.8 125C VCE = 2 V 0.4 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 0.01 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (V) 1000 Figure 6. Base-Emitter Voltage Figure 7. Forward Bias Safe Operating Area (FBSOA) http://onsemi.com 3 NJD35N04G PACKAGE DIMENSIONS DPAK CASE 369C-01 ISSUE O NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 --- 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 --- 0.89 1.27 3.93 --- -T- B V R 4 SEATING PLANE C E A S 1 2 3 Z U K F L D 2 PL G 0.13 (0.005) M J H T DIM A B C D E F G H J K L R S U V Z STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 3.0 0.118 SCALE 3:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 4 NJD35N04/D |
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